MRFE6VP6600N Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
600
Number of pins
4
Package Style
DFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.033
P1dB (Typ) (dBm)
57.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 600
Efficiency (Typ) (%)
81
Peak Power (Typ) (W)
900
Frequency Band (Hz)
1800000, 600000000
ParameterValue
Description
Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
600 @ CW
P1dB (Typ) (W)
600
Gain (Typ) (dB)
24
Power Gain (Typ) (dB) @ f (MHz)
24 @ 98
Frequency (Max) (MHz)
600
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.6
frange [max] (MHz)
600
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.033
Matching
unmatched
Modes of Operation
continuous wave
Peak Power (Typ) (dBm)
59.5

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MRFE6VP6600NR3(935312987528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
3048.7

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
MRFE6VP6600NR3
(935312987528)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)Disclaimer
MRFE6VP6600NR3
(935312987528)
854129

More about MRFE6VP6600N

These high ruggedness devices, MRFE6VP6600N and MRFE6VP6600GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.