MRF101AN Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
250
Number of pins
3
Package Style
DBS
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.1
P1dB (Typ) (dBm)
50
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 250
Efficiency (Typ) (%)
76.7
Frequency Band (Hz)
1800000, 250000000
ParameterValue
Description
Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
fi(RF) [min] (MHz)
1.8
P1dB (Typ) (W)
100
Gain (Typ) (dB)
21.1
Power Gain (Typ) (dB) @ f (MHz)
21.1 @ 230
Frequency (Max) (MHz)
250
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.25
frange [max] (MHz)
250
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
1.1
Matching
unmatched
Modes of Operation
pulsed radio frequency signal

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
MRF101AN(935377233129)
No
Yes
Certificate Of Analysis (CoA)
Yes
HREACH SVHC
2384.199

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead SolderingLead Soldering
MRF101AN
(935377233129)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MRF101AN
(935377233129)
854129
EAR99

More about MRF101AN

These devices, MRF101AN and MRF101BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.