MMRF1009H Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
1215
Number of pins
2
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.044
P1dB (Typ) (dBm)
57
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
960, 1215
Efficiency (Typ) (%)
62
Frequency Band (Hz)
960000000, 1215000000
ParameterValue
Description
Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
fi(RF) [min] (MHz)
960
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
500 @ Peak
P1dB (Typ) (W)
500
Gain (Typ) (dB)
19.7
Power Gain (Typ) (dB) @ f (MHz)
19.7 @ 1030
Frequency (Max) (MHz)
1215
Frequency (Min) (MHz)
960
Frequency (Min-Max) (GHz)
0.96000004 to 1.215
frange [max] (MHz)
1215
frange [min] (MHz)
960
Rth(j-a) (K/W)
0.044
Matching
input and output impedance matching
Modes of Operation
pulsed radio frequency signal

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MMRF1009HR5(935318134178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
4763.0

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MMRF1009HR5
(935318134178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MMRF1009HR5
(935318134178)
854129
EAR99

More about MMRF1009H

RF Power transistors, MMRF1009HR5 and MMRF1009HSR5, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulse applications.