MMRF1009HS Product Information|NXP

MMRF1009HS

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MMRF1009HS

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
1215
Number of pins
2
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.044
P1dB (Typ) (dBm)
57
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
960, 1215
Efficiency (Typ) (%)
62
Frequency Band (Hz)
960000000, 1215000000
ParameterValue
Description
Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
fi(RF) [min] (MHz)
960
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
500 @ Peak
P1dB (Typ) (W)
500
Gain (Typ) (dB)
19.7
Power Gain (Typ) (dB) @ f (MHz)
19.7 @ 1030
Frequency (Max) (MHz)
1215
Frequency (Min) (MHz)
960
Frequency (Min-Max) (GHz)
0.96000004 to 1.215
frange [max] (MHz)
1215
frange [min] (MHz)
960
Rth(j-a) (K/W)
0.044
Matching
input and output impedance matching
Modes of Operation
pulsed radio frequency signal

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More about MMRF1009H

RF Power transistors, MMRF1009HR5 and MMRF1009HSR5, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulse applications.