Design Files
Receive the full breakdown. See the product footprint and more in the eCad file.
- No Longer Manufactured
- MMRF1009H
960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
RF Power transistors, MMRF1009HR5 and MMRF1009HSR5, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulse applications.
NI-780H-2L, NI-780S-2L Package Image
Product Details
Features
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
RF Performance Table
Typical Pulse Performance
VDD = 50 Vdc, IDQ = 200 mA, Pulse Width = 128 µsec, Duty Cycle = 10%| Application | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
| Narrowband | 500 Peak | 1030 | 19.7 | 62.0 |
| Broadband | 500 Peak | 960-1215 | 18.5 | 57.0 |
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power
Buy/Parametrics
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Documentation
Quick reference to our documentation types.
3 documents
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Package Information
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins
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Package Information
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins
