MHT2012N Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
2500
Number of pins
24
Package Style
HQFN
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
4.3
P1dB (Typ) (dBm)
41
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2400, 2500
Efficiency (Typ) (%)
51.4
Frequency Band (Hz)
2400000000, 2500000000
ParameterValue
Description
RF LDMOS Integrated Power Amplifier, 2450 MHz, 12.5 W CW, 28 V
fi(RF) [min] (MHz)
2400
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
12.5 @ CW
P1dB (Typ) (W)
12.5
Gain (Typ) (dB)
30
Power Gain (Typ) (dB) @ f (MHz)
30 @ 2450
Frequency (Max) (MHz)
2500
Frequency (Min) (MHz)
2400
Frequency (Min-Max) (GHz)
2.4 to 2.5
frange [max] (MHz)
2500
frange [min] (MHz)
2400
Rth(j-a) (K/W)
4.3
Matching
input impedance matching
Modes of Operation
continuous wave

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MHT2012NT1(935361937528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
400.6435

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead SolderingLead SolderingLead Free SolderingLead SolderingLead Free Soldering
MHT2012NT1
(935361937528)
No
3
260
260
40
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MHT2012NT1
(935361937528)
854233
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MHT2012NT1
(935361937528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about MHT2012N

The MHT2012N 12.5 W CW RF power integrated circuit is designed for RF energy applications operating in the 2450 MHz ISM band.