A5G35S008N Product Information|NXP

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Operating Features

ParameterValue
Frequency (Min) (MHz)
3300
Frequency (Max) (MHz)
3700
Supply Voltage (Typ) (V)
48
ParameterValue
Peak Power (Typ) (dBm)
40
Peak Power (Typ) (W)
10
Die Technology
GaN

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
A5G35S008NT6(935427147528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
400.0

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
A5G35S008NT6
(935427147528)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)Disclaimer
A5G35S008NT6
(935427147528)
854129

More about A5G35S008N

This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz.