A3T18H455W23S Product Information|NXP

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Operating Features

ParameterValue
Frequency (Min) (MHz)
1805
Frequency (Max) (MHz)
1880
Supply Voltage (Typ) (V)
30
ParameterValue
Peak Power (Typ) (dBm)
58.4
Peak Power (Typ) (W)
685
Die Technology
LDMOS

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
A3T18H455W23SR6(935354975128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6032.867

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
A3T18H455W23SR6
(935354975128)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)Disclaimer
A3T18H455W23SR6
(935354975128)
854233

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
A3T18H455W23SR6
(935354975128)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about A3T18H455W23S

The A3T18H455W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.