A3T18H455W23S|1805-1880 MHz, 87 W Avg, 30 V

Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 29.5 Vdc, I_DQA = 590 mA, V_GSB = 0.78 Vdc, P_out = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	17.2	53.5	8.0	–28.3
1840 MHz	17.4	54.1	8.1	–29.4
1880 MHz	17.1	53.7	7.9	–31.2

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet[A3T18H455W23S]

PDFSep 1, 2017Rev 0

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

PDFJun 21, 2017Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Models
A3T18H455W23S Peaking Class C S-Parameters

S2PRev 0Sep 1, 2017136.5 KBA3T18H455W23S-Peaking-Class-C

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Models
A3T18H455W23S Carrier S-Parameters

S2PRev 0Sep 1, 2017136.4 KBA3T18H455W23S-Carrier

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Models
A3T18H455W23S Peaking Class AB S-Parameters

S2PRev 0Sep 1, 2017136.4 KBA3T18H455W23S-Peaking-Class-AB

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Printed Circuit Boards and Schematics
A3T18H455W23S 1800 MHz PCB DXF file

ZIPRev 2Sep 1, 201758.1 KBA3T18H455W23S-1800-PCB

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Calculators
A3T18H455W23S RF Power Electromigration MTTF Calculation Program

XLSXRev 0Sep 5, 201781.3 KBA3T18H455W23S_MTTF_CALC

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1805-1880 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet[A3T18H455W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet[A3T18H455W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

A3T18H455W23S Peaking Class C S-Parameters

A3T18H455W23S Carrier S-Parameters

A3T18H455W23S Peaking Class AB S-Parameters

A3T18H455W23S 1800 MHz PCB DXF file

A3T18H455W23S RF Power Electromigration MTTF Calculation Program

Filter by

Filter By

A3T18H455W23S Peaking Class C S-Parameters

A3T18H455W23S Carrier S-Parameters

A3T18H455W23S Peaking Class AB S-Parameters

A3T18H455W23S 1800 MHz PCB DXF file

A3T18H455W23S RF Power Electromigration MTTF Calculation Program

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1805-1880 MHz, 87 W Avg., 30 V Airfast^® RF Power LDMOS Transistor