A3M37TL039 Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
3800
Number of pins
26
Package Style
HLQFN
Amp Class
AB, C
Test Signal
LTE
Supply Voltage (Typ) (V)
26
Class
AB, C
Die Technology
LDMOS
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
3600, 3800
Efficiency (Typ) (%)
39.5
Peak Power (Typ) (W)
52.5
Frequency Band (Hz)
3600000000, 3800000000
ParameterValue
Description
Airfast Power Amplifier Module, 3600-3800 MHz, 28 dB, 7 W Avg.
fi(RF) [min] (MHz)
3600
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
7 @ Avg
Gain (Typ) (dB)
28.2
Power Gain (Typ) (dB) @ f (MHz)
28.2 @ 3700
Frequency (Max) (MHz)
3800
Frequency (Min) (MHz)
3600
Frequency (Min-Max) (GHz)
3.6000001 to 3.8000002
frange [max] (MHz)
3800
frange [min] (MHz)
3600
Matching
input and output impedance matching
Modes of Operation
long term evolution (3GPP)
Peak Power (Typ) (dBm)
47.2

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
A3M37TL039T2(935416055528)
No
Yes
Certificate Of Analysis (CoA)
Yes
HREACH SVHC
164.5268

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead SolderingLead SolderingLead Free SolderingLead SolderingLead Free Soldering
A3M37TL039T2
(935416055528)
No
3
260
260
40
40

Shipping

Part/12NCHarmonized Tariff (US)Disclaimer
A3M37TL039T2
(935416055528)
854233

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
A3M37TL039T2
(935416055528)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
A3M37TL039T2
(935416055528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about A3M37TL039

The A3M37TL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low-power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.