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Models
S-parameters BGU8H1
SiGe:C Low Noise Amplifier MMIC for LTE
- This page contains information on a product that is not recommended for new designs.
The BGU8H1 is, also known as the LTE1001H, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8H1 requires one external matching inductor.
The BGU8H1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 13 dB gain at a noise figure of 0.9 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity.
The BGU8H1 is optimized for 2300 MHz to 2690 MHz.
6-Pin Leadless Package
Product Details
Features
- Operating frequency from 2300 MHz to 2690 MHz
- Noise figure = 0.9 dB
- Gain 13 dB
- High input 1 dB compression point of -1 dBm
- High in band IP3i of 8 dBm
- Supply voltage 1.5 V to 3.1 V
- Self-shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 5.0 mA
- Power-down mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level of 1
Target Applications
- LNA for LTE reception in smart phones
- Feature phones
- Tablet PCs
- RF front-end modules
Part numbers include: BGU8H1.
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Documentation
Quick reference to our documentation types.
3 documents
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Data Sheet
SiGe:C low noise amplifier MMIC for LTE
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Application Note
BGU8H1 LTE LNA evaluation board