This A6G35S006N 28 dBm average, 10 W peak RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 5000 MHz.
Typical single-carrier W-CDMA reference circuit performance: VDD = 48 Vdc, IDQ = 18 mA, Pout = 28 dBm Avg., input signal PAR = 9.9 dB @ 0.01 % probability on CCDF. (1)
| Frequency | Gps (dB) | ηD (%) | Output PAR (dB) | ACPR (dBc) |
|---|---|---|---|---|
| 3300 MHz | 21.1 | 18.5 | 9.9 | -39.5 |
| 3400 MHz | 21.1 | 19.0 | 9.8 | -39.5 |
| 3500 MHz | 21.0 | 19.7 | 9.7 | -39.6 |
| 3600 MHz | 20.6 | 20.2 | 9.6 | -40.1 |
| 3670 MHz | 20.4 | 20.7 | 9.5 | -39.7 |
Typical single-carrier W-CDMA performance: VDD = 48 Vdc, IDQ = 18 mA, Pout = 28 dBm Avg., input signal PAR = 9.9 dB @ 0.01 % probability on CCDF. (1)
| Frequency | Gps (dB) | ηD (%) | Output PAR (dB) | ACPR (dBc) |
|---|---|---|---|---|
| 3670 MHz | 19.7 | 18.5 | 9.8 | -43.1 |
| 3700 MHz | 20.2 | 18.8 | 9.8 | -42.8 |
| 3800 MHz | 20.8 | 19.4 | 9.6 | -44.0 |
| 3900 MHz | 20.6 | 19.9 | 9.5 | -44.3 |
| 4000 MHz | 20.2 | 20.7 | 9.4 | -44.2 |
| 4100 MHz | 20.0 | 21.7 | 9.3 | -44.8 |
Typical single-carrier W-CDMA performance: VDD = 48 Vdc, IDQ = 19 mA, Pout = 28 dBm Avg., input signal PAR = 9.9 dB @ 0.01 % probability on CCDF. (1)
| Frequency | Gps (dB) | ηD (%) | Output PAR (dB) | ACPR (dBc) |
|---|---|---|---|---|
| 4800 MHz | 17.5 | 17.2 | 9.3 | -44.2 |
| 4900 MHz | 18.0 | 17.5 | 8.7 | -46.2 |
| 5000 MHz | 17.7 | 17.3 | 8.6 | -48.3 |
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4 documents
Compact List
4 documents
Compact List
2 design files
