The A5M35TG040−TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field−proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems.
Typical LTE Performance: Pout = 10.5 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1)
| Carrier Center Frequency | Gain (dB) | ACPR (dBc) | PAE (%) |
| 3410 MHz | 30.5 | –27.6 | 46.7 |
| 3500 MHz | 30.5 | –30.2 | 47.5 |
| 3590 MHz | 30.4 | –32.8 | 47.9 |
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Part | Order | CAD Model | Status | Frequency (Min) (MHz) | Frequency (Max) (MHz) | Supply Voltage (Typ) (V) | Peak Power (Typ) (dBm) | Peak Power (Typ) (W) | Die Technology |
|---|---|---|---|---|---|---|---|---|---|
Active | 3400 | 3600 | 5, 48 | 49.4 | 87.1 | GaN, LDMOS |
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2 documents
Compact List
2 documents
Compact List
1 design file
