A5M37SG239|Airfast Power Amplifier Module | NXP Semiconductors

3450-3980 MHz, 35 dB, 8 W Avg. Airfast® Power Amplifier Module with Autobias Control

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Product Details

Features

  • 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in-package Doherty
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low complexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude
  • Autobias on power up
  • Temperature sensing
  • Digital interface (I2C or SPI)
  • Embedded registers and DACs for setting bias conditions
  • Tx enable control pin for TDD operation

RF Performance Table

3450–3980 MHz

Typical LTE performance: Pout = 8 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, input signal PAR = 8 dB @ 0.01 % probability on CCDF. (1)

Carrier Center Frequency Gain (dB) ACPR (dBc) PAE (%)
3460 MHz 34.8 -29.1 37.3
3500 MHz 34.6 -29.2 37.9
3600 MHz 34.6 -30.1 39.8
3700 MHz 34.8 -31.4 40.3
3800 MHz 35.1 -32.8 38.4
3900 MHz 35.2 -33.7 35.1
3970 MHz 34.8 -34.2 31.6

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CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

3450

3980

5, 48

48.6

72.4

GaN, LDMOS

N true 0 PSPA5M37SG239en 2 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 1 Y English https://docs.nxp.com/bundle/A5M37SG239/page/topics/general_description.html A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Airfast® power amplifier module with autobias control designed for wireless infrastructure applications. 1728019928503725565311 PSP 1.3 MB None None documents None 1728019928503725565311 /docs/en/data-sheet/A5M37SG239.pdf 1283649 /docs/en/data-sheet/A5M37SG239.pdf A5M37SG239 documents N N Y 2024-10-03 A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Data Sheet https://docs.nxp.com/bundle/A5M37SG239/page/topics/general_description.html /docs/en/data-sheet/A5M37SG239.pdf Data Sheet N 980000996212993340 /bundle/A5M37SG239/page/topics/general_description.html /docs/en/data-sheet/A5M37SG239.pdf 2024-12-30 1.3 MB pdf N en Sep 30, 2024 980000996212993340 Data Sheet Y N A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Data Sheet Application Note Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note false 0 A5M37SG239 downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 Data Sheet 1 https://docs.nxp.com/bundle/A5M37SG239/page/topics/general_description.html /docs/en/data-sheet/A5M37SG239.pdf 2024-10-03 /bundle/A5M37SG239/page/topics/general_description.html 1728019928503725565311 PSP 1 Sep 30, 2024 Data Sheet A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Airfast® power amplifier module with autobias control designed for wireless infrastructure applications. None /docs/en/data-sheet/A5M37SG239.pdf Y English documents 1283649 Y None 980000996212993340 2024-12-30 N https://docs.nxp.com/bundle/A5M37SG239/page/topics/general_description.html A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Data Sheet /docs/en/data-sheet/A5M37SG239.pdf documents 980000996212993340 Data Sheet N en None Y /docs/en/data-sheet/A5M37SG239.pdf 1.3 MB pdf 1 N N A5M37SG239 3450-3980 MHz, 35 dB, 8 W Avg Data Sheet 1.3 MB A5M37SG239 N 1728019928503725565311 true Y Products

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