Design Files
1 design file
-
Printed Circuit Boards and Schematics
12 mm x 8 mm Module 35-Lead PCB DXF file
Sign in for a personalized NXP experience.
The A5M37SG239 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems. The module includes an autobias feature that automatically sets the transistor bias upon power up and an integrated sensor that monitors the temperature. Communications to the module can be accomplished via either I²C or SPI.
Typical LTE performance: Pout = 8 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, input signal PAR = 8 dB @ 0.01 % probability on CCDF. (1)
Carrier Center Frequency | Gain (dB) | ACPR (dBc) | PAE (%) |
---|---|---|---|
3460 MHz | 34.8 | -29.1 | 37.3 |
3500 MHz | 34.6 | -29.2 | 37.9 |
3600 MHz | 34.6 | -30.1 | 39.8 |
3700 MHz | 34.8 | -31.4 | 40.3 |
3800 MHz | 35.1 | -32.8 | 38.4 |
3900 MHz | 35.2 | -33.7 | 35.1 |
3970 MHz | 34.8 | -34.2 | 31.6 |
1. All data measured with device soldered to NXP reference circuit.
1 result
Include 0 NRND
Part | Order | CAD Model | Status | Frequency (Min) (MHz) | Frequency (Max) (MHz) | Supply Voltage (Typ) (V) | Peak Power (Typ) (dBm) | Peak Power (Typ) (W) | Die Technology |
---|---|---|---|---|---|---|---|---|---|
Active | 3450 | 3980 | 5, 48 | 48.6 | 72.4 | GaN, LDMOS |
A5M37SG239
Quick reference to our documentation types.
2 documents
Compact List
There are no results for this selection.
Please wait while your secure files are loading.
2 documents
Compact List
1 design file
Please wait while your secure files are loading.
1 design file
Help us improve your experience on our site. We invite you to take our five-question survey.