The A5M36SG239 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems. The module includes an autobias feature that automatically sets the transistor bias upon power up and an integrated sensor that monitors the temperature. Communications to the module can be accomplished via either I2C or SPI.
Part numbers include: A5M36SG239.
Typical LTE Performance: Pout = 8 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.1
| Carrier Center Frequency |
Gain (dB) |
ACPR (dBc) |
PAE (%) |
| 3410 MHz | 31.4 | -27.4 | 44.1 |
| 3500 MHz | 31.4 | –26.6 | 44.4 |
| 3600 MHz | 31.7 | –26.2 | 46.3 |
| 3700 MHz | 31.6 | –26.9 | 48.0 |
| 3790 MHz | 31.0 | –27.2 | 47.3 |
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1 design file
Receive the full breakdown. See the product footprint and more in the eCad file.
