A5M35TG040-TC|Airfast Power Amplifier Module | NXP Semiconductors

3400-3600 MHz, 30 dB, 10.5 W Avg. Airfast® Power Amplifier Module

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Product Details

Features

  • 2−stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in−package Doherty
  • Thermal path is separated from electrical/solder connection path for enhanced thermal dissipation
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low complexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude
  • RoHS compliant

RF Performance Table

3400–3600 MHz

Typical LTE Performance: Pout = 10.5 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1)

Buy/Parametrics

1 result

Include 0 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

3400

3600

5, 48

49.4

87.1

GaN, LDMOS

Documentation

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2 documents

Design Files

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1 design file

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