A5G35S004N |3300–4300 MHz, 24.5 dBm Avg, 48 V

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Radio Frequency
Active Antenna Systems
3200 - 6000 MHz
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A5G35S004N

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This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.

Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Designed for low complexity digital linearization systems
Universal broadband driver
Optimized for massive MIMO active antenna systems for 5G base stations
RoHS compliant

RF Performance Table

3500 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQ = 12 mA, P_out = 24.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
3400 MHz	19.3	19.5	9.9	-38.7
3500 MHz	19.4	20.0	9.7	-40.3
3600 MHz	18.8	20.4	9.4	-42.1

1. All data measured in reference circuit with device soldered to printed circuit board.

3700–4000 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQ = 10 mA, P_out = 28 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
3700 MHz	18.3	22.5	8.4	-35.2
3800 MHz	18.8	25.2	8.5	-38.6
3900 MHz	18.1	23.8	8.5	-41.2
4000 MHz	17.2	21.6	8.6	-42.4

1. All data measured in reference circuit with device soldered to printed circuit board.

4100–4300 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQ = 10 mA, P_out = 28 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
4100 MHz	17.6	26.5	7.6	-33.2
4200 MHz	17.2	26.5	7.8	-36.2
4300 MHz	16.5	26.5	7.9	-38.3

1. All data measured in reference circuit with device soldered to printed circuit board.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

4 documents

^{Data Sheet}
A5G35S004N 3300–4300 MHz, 24.5 dBm Avg, 48 V Data Sheet

PDFRev 5Oct 18, 2023458.3 KBA5G35S004NEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Fact Sheet}
GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet

PDFRev 0Mar 24, 20221.1 MBDMS5G3264FSEnglish

Design Resources

Design Files

Quick reference to our design files types.

1-5 of 8 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
A5G35S004N S-Parameters

S2PRev 0Dec 15, 2020 11:26:0038.0 KBA5G35S004N-SP
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^{Printed Circuit Boards and Schematics}
A5G35S004N 3500 MHz PCB DXF file

ZIPRev 1Dec 15, 2020 11:13:0017.8 KBA5G35S004N-3500-PCB
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^{Design Files - miscellaneous}
A5G35S004N 3300-3900 MHz Design Files

ZIPRev 0Mar 10, 2023 14:33:002.4 MBA5G35S004N-3300-3900-DESIGN-FILES
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^{Design Files - miscellaneous}
A5G35S004N 3700-4000 MHz Design Files

ZIPRev 0Apr 7, 2022 14:33:00778.1 KBA5G35S004N-3700-4000-DESIGN-FILES
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^{Design Files - miscellaneous}
A5G35S004N 100-2500 MHz Design Files

ZIPRev 0Apr 11, 2022 14:32:00538.7 KBA5G35S004N-100-2500-DESIGN-FILES
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A5G35H110N 3400-3600 MHz Design Files

ZIPRev 0Apr 7, 2022 13:40:00775.5 KBA5G35H110N-3400-3600-DESIGN-FILES
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^{Design Files - miscellaneous}
A5G35S004N, A3G26D055N 400-2700 MHz Design Files

ZIPRev 0Jan 13, 2023 14:34:002.5 MBA5G35S004N-A3G26D055N-400-2700-DESIGN-FILES
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^{Design Files - miscellaneous}
A5G35S004N + A5G35H055N 3400-3800 MHz Design Files

ZIPRev 0Apr 7, 2022 14:33:00657.2 KBA5G35S004N-A5G35H055N-3400-3800-DESIGN-FILES
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3300-4300 MHz, 24.5 dBm Avg., 48 V Airfast^® RF Power GaN Transistor

Product Details

Features

RF Performance Table

3500 MHz

3700–4000 MHz

4100–4300 MHz

Buy/Parametrics

Documentation

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