A5G35S004N |3300–4300 MHz, 24.5 dBm Avg, 48 V | NXP Semiconductors

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3300-4300 MHz, 24.5 dBm Avg., 48 V Airfast® RF Power GaN Transistor

A5G35S004N Active

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This RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 4300 MHz.

Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Designed for low complexity digital linearization systems
  • Universal broadband driver
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

RF Performance Table

3500 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 12 mA, Pout = 24.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
3400 MHz19.319.59.9-38.7
3500 MHz19.420.09.7-40.3
3600 MHz18.820.49.4-42.1
1. All data measured in reference circuit with device soldered to printed circuit board.

3700–4000 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 10 mA, Pout = 28 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
3700 MHz18.322.58.4-35.2
3800 MHz18.825.28.5-38.6
3900 MHz18.123.88.5-41.2
4000 MHz17.221.68.6-42.4
1. All data measured in reference circuit with device soldered to printed circuit board.

4100–4300 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 10 mA, Pout = 28 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
4100 MHz17.626.57.6-33.2
4200 MHz17.226.57.8-36.2
4300 MHz16.526.57.9-38.3
1. All data measured in reference circuit with device soldered to printed circuit board.

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N true 0 PSPA5G35S004Nen 4 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Fact Sheet Fact Sheet t523 1 en_US en_US en Data Sheet Data Sheet 1 1 5 Y English https://docs.nxp.com/bundle/A5G35S004N/page/topics/general_description.html A5G35S004N 3300–4300 MHz, 24.5 dBm Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1647285037317692785438 PSP 458.3 KB None None documents None 1647285037317692785438 /docs/en/data-sheet/A5G35S004N.pdf 458282 /docs/en/data-sheet/A5G35S004N.pdf A5G35S004N documents N N Y 2022-03-14 A5G35S004N 3300–4300 MHz, 24.5 dBm Avg, 48 V Data Sheet https://docs.nxp.com/bundle/A5G35S004N/page/topics/general_description.html /docs/en/data-sheet/A5G35S004N.pdf Data Sheet N 980000996212993340 /bundle/A5G35S004N/page/topics/general_description.html /docs/en/data-sheet/A5G35S004N.pdf 2025-01-07 458.3 KB pdf N en Oct 18, 2023 980000996212993340 Data Sheet Y N A5G35S004N 3300–4300 MHz, 24.5 dBm Avg, 48 V Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Fact Sheet Fact Sheet 1 4 1 English NXP’s extensive portfolio of RF power solutions for active antenna systems (AAS) includes GaN discrete mMIMO solutions for 64T64R and 32T32R solutions. 1648159440615726957303 PSP 1.2 MB None None documents None 1648159440615726957303 /docs/en/fact-sheet/DMS5G3264FS.pdf 1174719 /docs/en/fact-sheet/DMS5G3264FS.pdf DMS5G3264FS documents N N 2022-03-24 GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet /docs/en/fact-sheet/DMS5G3264FS.pdf /docs/en/fact-sheet/DMS5G3264FS.pdf Fact Sheet N 736675474163315314 2025-01-28 pdf N en Dec 3, 2024 736675474163315314 Fact Sheet Y N GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet false 0 A5G35S004N downloads en true 1 Y PSP Y Y Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 https://docs.nxp.com/bundle/A5G35S004N/page/topics/general_description.html /docs/en/data-sheet/A5G35S004N.pdf 2022-03-14 /bundle/A5G35S004N/page/topics/general_description.html 1647285037317692785438 PSP 1 Oct 18, 2023 Data Sheet A5G35S004N 3300–4300 MHz, 24.5 dBm Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A5G35S004N.pdf Y English documents 458282 Y None 980000996212993340 2025-01-07 N https://docs.nxp.com/bundle/A5G35S004N/page/topics/general_description.html A5G35S004N 3300–4300 MHz, 24.5 dBm Avg, 48 V Data Sheet /docs/en/data-sheet/A5G35S004N.pdf documents 980000996212993340 Data Sheet N en None Y /docs/en/data-sheet/A5G35S004N.pdf 458.3 KB pdf 5 N N A5G35S004N 3300–4300 MHz, 24.5 dBm Avg, 48 V Data Sheet 458.3 KB A5G35S004N N 1647285037317692785438 Fact Sheet 1 /docs/en/fact-sheet/DMS5G3264FS.pdf 2022-03-24 1648159440615726957303 PSP 4 Dec 3, 2024 Fact Sheet NXP’s extensive portfolio of RF power solutions for active antenna systems (AAS) includes GaN discrete mMIMO solutions for 64T64R and 32T32R solutions. None /docs/en/fact-sheet/DMS5G3264FS.pdf English documents 1174719 None 736675474163315314 2025-01-28 N /docs/en/fact-sheet/DMS5G3264FS.pdf GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet /docs/en/fact-sheet/DMS5G3264FS.pdf documents 736675474163315314 Fact Sheet N en None Y pdf 1 N N GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet 1.2 MB DMS5G3264FS N 1648159440615726957303 true Y Products

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