A5M34TG040-TC|Airfast Power Amplifier Module | NXP Semiconductors

3300-3670 MHz, 31 dB, 10.7 W Avg. Airfast® Power Amplifier Module

Roll over image to zoom in

Product Details

Features

  • 2−stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in−package Doherty
  • Thermal path is separated from electrical/solder connection path for enhanced thermal dissipation
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low complexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude
  • RoHS compliant

RF Performance Table

3300–3670 MHz

Typical LTE Performance: Pout = 10.7 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF. (1)

Buy/Parametrics

1 result

Include 0 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

3300

3670

5, 48

49.2

83.2

GaN, LDMOS

Documentation

Quick reference to our documentation types.

2 documents

Design Files

Quick reference to our design files types.

1 design file

Support

What do you need help with?