MMZ09332B|130-1000 MHz, 30 dB Amplifier | NXP Semiconductors

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130-1000 MHz, 30 dB, 33 dBm, InGaP HBT Linear Amplifier

MMZ09332B Not Recommended for New Designs
The MMZ09332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, smart grid, W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides high linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.

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Features

  • Frequency: 130-1000 MHz
  • P1dB: 33 dBm, 450 to 1000 MHz
  • OIP3: up to 48 dBm @ 900 MHz
  • High Linearity
  • Active Bias Control (adjustable externally)
  • Single 3 to 5 V Supply
  • Single-ended Power Detector
  • Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
  • RoHS Compliant

RF Performance Tables

Typical PA Performance

VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 140 mA
Frequency Pout
(dBm)		 Gps
(dB)		 ACPR
(dBc)		 ICC
(mA)		 Test Signal
748 MHz23 30.9–49.6315W-CDMA
942 MHz22 27.1–50.4240W-CDMA

Typical PA Performance

VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 110 mA
Frequency Pout
(dBm)		 Gps
(dB)		 PAE
(%)		 Test Signal
450 MHz32.3
30.3 @ 3.6 V		37.2
26.3 @ 3.6 V		45.5 @ 5 V
53.7 @ 3.6 V		CW
760 MHz32.2 30.840.0 @ 5 VCW

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MMZ09332B
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Not Recommended for New Designs

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