MRF8VP13350N|700-1300 MHz, 350 W CW, 50 V | NXP Semiconductors

700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

  • This page contains information on a product that is not recommended for new designs.

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Features

  • Internally input matched for ease of use
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50 VDD operation
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection
  • RoHS Compliant
  • 915 MHz industrial heating/welding systems
  • 1300 MHz particle accelerators
  • 900 MHz TETRA base stations

RF Performance Tables

1300 MHz

VDD = 50 Vdc

915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc

Load Mismatch/Ruggedness

1. Measured in 1300 MHz pulse narrowband test circuit.

Buy/Parametrics

2 results

Exclude 2 NRND

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CAD Model

Status

Not Recommended for New Designs

End of Life

Documentation

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8 documents

Compact List

Application Note (2)
Data Sheet (1)
Package Information (2)
Supporting Information (1)
Technical Notes (1)
White Paper (1)

Design Resources

Design Files

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5 design files

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