A2T21H100-25S|2110-2170 MHz, 18 W, 28 V

A2T21H100-25S|2110-2170 MHz, 18 W, 28 V | NXP Semiconductors

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Products
Radio Frequency (RF)
Legacy RF
Legacy RF Power
- A2I20D020N
- A2I20D040N
- A2I20H060N
- A2T07D160W04S
- A2T09D400-23N
- A2T14H450-23N
- A2T21H100-25S
- A2T23H160-24S
- A2T27S020N
- A3I35D025WN
- A3T09S100N
- A3T18H360W23S
- A3T21H360W23S
- AFIC901N
- AFM906N
- AFM907N
- AFM912N
- AFSC5G23D37
- AFSC5G26D37
- AFT05MP075N
- AFT05MS004N
- AFT05MS006N
- AFT05MS031N
- AFT09MP055N
- AFT09MS007N
- AFT09MS015N
- AFT09MS031N
- AFT27S006N
- AFT27S012N
- MD8IC970N
- MHT1803A
- MHT2012N
- MMRF1004N
- MMRF1308H
- MMRF1314H
- MMT20303H
- MRF101AN
- MRF13750H
- MRF1518NT1
- MRF1K50H
- MRF1K50N
- MRF300AN
- MRF6V10010N
- MRF6V12250H
- MRF6V12500H
- MRF6V14300H
- MRF8VP13350N
- MRFE6S9060NR1
- MRFE6VP100H
- MRFE6VP5150N
- MRFE6VP5600H
- MRFE6VP61K25H
- MRFE6VP61K25N
- MRFE6VP6300H
- MRFE6VP6600N
- MRFE6VS25L
- MRFE6VS25N
- MRFE8VP8600H
- MRFX035H
- MRFX1K80H
- MRFX1K80N
- MRFX600H
- MW6S004NT1
- MW6S010N
- MW7IC008N
A2T21H100-25S

The A2T21H100-25SR3 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

See product image

Data Sheet

Product Details

Features

Advanced High Performance In-Package Doherty
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant

RF Performance Table

2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 250 mA, V_GSB = 0.2 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	17.3	52.1	8.2	–32.4
2140 MHz	17.4	51.0	8.0	–33.1
2170 MHz	17.4	50.5	8.0	–35.0

Buy/Parametrics

Part Show description	CAD Model	Status
A2T21H100-25S Data Sheet		End of Life

Documentation

Quick reference to our documentation types.

3 documents

Compact List

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]

PDFJan 26, 2022Rev 1

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins[SOT1797-1]

PDFFeb 15, 2016Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

1-5of 7 design files

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016802 BRF_HIGH_POWER_MODEL_AWR_KIT
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019547.9 KBA2T21H100_25S_MDL_ADS

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A2T21H100-25SR3 S-Parameters

S2PRev 0Jun 1, 201548.1 KBA2T21H100_25S_PEAKING_CLASS_C_SP

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A2T21H100-25SR3 S-Parameters

S2PRev 0Jun 1, 201548.1 KBA2T21H100_25S_CARRIER_250MA_SP

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Jul 21, 20151.4 MBA2T21H100_25S_MDL_AWR

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A2T21H100-25SR3 S-Parameters

S2PRev 0Jun 1, 201548.1 KBA2T21H100_25S_PEAKING_300MA_SP

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue

Show All

Shopping cart

2110-2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

Data Sheet (1)

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]

Package Information (1)

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins[SOT1797-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Data Sheet (1)

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]

Package Information (1)

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins[SOT1797-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

A2T21H100-25SR3 S-Parameters

A2T21H100-25SR3 S-Parameters

A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

A2T21H100-25SR3 S-Parameters

Filter by

Filter By

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T21H100-25S RF High-Power Model ADS Product Model Design Kit

A2T21H100-25SR3 S-Parameters

A2T21H100-25SR3 S-Parameters

A2T21H100-25S RF High-Power Model AWR Product Model Design Kit

A2T21H100-25SR3 S-Parameters

Support

What do you need help with?

Suggested Links

Recently viewed products

2110-2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]

A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet[A2T21H100-25S]