MMRF1314H|1200-1400 MHz, 1000 W Peak, 52 V

MMRF1314H|1200-1400 MHz, 1000 W Peak, 52 V | NXP Semiconductors

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MMRF1314H

These RF power devices, MMRF1314H, MMRF1314HS and MMRF1314GS, are designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse applications and are ideal for use in high power military and commercial L-Band radar applications.

See product image

Data Sheet

Application Notes

Product Details

Features

Internally input and output matched for broadband operation and ease of use
Device can be used in a single-ended, push-pull or quadrature configuration
Qualified up to a maximum of 52 V_DD operation
High ruggedness, handles > 20:1 VSWR
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
Characterized with series equivalent large-signal impedance parameters
RoHS Compliant
These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.

Military and commercial L-Band radar systems

RF Performance Tables

Typical Performance

In 1200-1400 MHz reference circuit, V_DD = 52 Vdc, I_DQ(A+B) = 100 mA

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
1200	Pulse (128 µsec, 10% Duty Cycle)	1130 Peak	15.5	47.5
1300		1170 Peak	17.2	47.0
1400		1000 Peak	17.0	46.5

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
1400	Pulse (128 µsec, 10% Duty Cycle)	> 20:1 at all Phase Angles	31.6 Peak (3 dB Overdrive)	52	No Device Degradation

Buy/Parametrics

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Design Resources

Receive the full breakdown. See the product footprint and more in the eCad file.

1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors

Product Details

Features

RF Performance Tables

Typical Performance

Load Mismatch/Ruggedness

Buy/Parametrics

Documentation

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Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

MMRF1314H 1200-1400 MHz, 1000 W Peak, 52 V Data Sheet[MMRF1314H]

Package Information (2)

98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins[SOT1787-1]

98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins[SOT1829-1]

Supporting Information (1)

RF Military High Power Avionics Devices[MILITARY_HIGH_POWER_RADAR_TRN_SI]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]