A5M37TG240|Airfast Power Amplifier Module | NXP Semiconductors

3400-4000 MHz, 32 dB, 9 W Avg. Airfast® Power Amplifier Module

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Product Details

Features

  • 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in-package Doherty
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low complexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude
  • Supports up to 530 MHz instantaneous signal bandwidth

RF Performance Table

3400–4000 MHz

Typical LTE Performance: Pout = 9 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.(1)

Buy/Parametrics

1 result

Include 0 NRND

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CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

3400

4000

5, 48

48

63.1

GaN, LDMOS

Documentation

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2 documents

Compact List

Design Files

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1 design file

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