Product Details

Features

Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

Driver Application - 900 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ1(A+B) = 58 mA, I_DQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
920 MHz	36.2	17.5	–48.9
940 MHz	36.2	17.4	–49.5
960 MHz	36.1	17.3	–49.1

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 25 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ≃ 26 Watts CW

Driver Application - 700 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts, I_DQ1(A+B) = 58 mA, I_DQ2(A+B) = 222 mA, Pout = 2.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
728 MHz	36.4	17.2	–48.9
748 MHz	36.4	17.6	–49.7
768 MHz	36.4	17.9	–50.5

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

10 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
Effective Small Cell Solutions for MIMO Radios[AN5296]

PDFJan 15, 2017Rev 0
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

PDFMar 12, 2009Rev 0
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

MD8IC925N 728-960 MHz, 2.5 W Avg., 28 V Data Sheet[MD8IC925N]

PDFSep 8, 2016Rev 1

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

PDFMar 18, 2016Rev B
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

PDFFeb 26, 2016Rev B

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

PDFMay 15, 2015Rev 0

Design Resources

Design Files

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3 design files

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
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MD8IC925N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019790.2 KBMD8IC925N_MDL_ADS

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Calculators
MD8IC925NR1, MD8IC925GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0May 30, 201330.7 KBMD8IC925N_MTTF_CALC

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3 design files

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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MD8IC925N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00790.2 KBMD8IC925N_MDL_ADS

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MD8IC925NR1, MD8IC925GNR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0May 30, 2013 00:00:0030.7 KBMD8IC925N_MTTF_CALC

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728-960 MHz, 2.5 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

Product Details

Features

RF Performance Tables

Driver Application - 900 MHz

Driver Application - 700 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (6)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

Effective Small Cell Solutions for MIMO Radios[AN5296]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

MD8IC925N 728-960 MHz, 2.5 W Avg., 28 V Data Sheet[MD8IC925N]

Package Information (2)

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

White Paper (1)

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

Filter by

Application Note (6)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

Effective Small Cell Solutions for MIMO Radios[AN5296]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages[AN3789]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

MD8IC925N 728-960 MHz, 2.5 W Avg., 28 V Data Sheet[MD8IC925N]

Package Information (2)

98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins[SOT1720-2]

98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins[SOT1720-3]

White Paper (1)

Advances in Airfast RFICs White Paper[AIRFASTWBFWP]

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MD8IC925N RF High-Power Model ADS Product Model Design Kit

MD8IC925NR1, MD8IC925GNR1 RF Power Electromigration MTTF Calculation Program

Filter by

Filter By

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MD8IC925N RF High-Power Model ADS Product Model Design Kit

MD8IC925NR1, MD8IC925GNR1 RF Power Electromigration MTTF Calculation Program

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