A2I09VD015N|575-960 MHz, 2 W Avg, 48 V | NXP Semiconductors

575-960 MHz, 2 W Avg., 48 V Airfast®Wideband Integrated RF LDMOS Amplifier

See product image

Product Details

Features

  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 16 mA, IDQ2(A+B) = 84 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)1. All data measured in fixture with device soldered to heatsink.

Buy/Parametrics

2 results

Exclude 2 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

End of Life

575

960

48

42.7

18.5

LDMOS

End of Life

575

960

48

42.7

18.5

LDMOS

Documentation

Quick reference to our documentation types.

1 document

Design Files

Quick reference to our design files types.

2 design files

Support

What do you need help with?

Recently viewed products

There are no recently viewed products to display.