Product Details

Features

On-chip matching (50 ohm input, DC blocked)
Integrated quiescent current temperature compensation with enable/disable function
Designed for digital predistortion error correction systems
Optimized for Doherty applications
RoHS compliant

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQ1(A+B) = 46 mA, I_DQ2(A+B) = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
920 MHz	34.4	19.9	–45.0
940 MHz	34.5	20.0	–44.6
960 MHz	34.3	19.8	–44.3

700 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQ1(A+B) = 50 mA, I_DQ2(A+B) = 150 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	PAE (%)	ACPR (dBc)
728 MHz	30.9	19.6	–44.7
748 MHz	31.1	19.5	–45.5
768 MHz	31.2	19.3	–46.2

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	Die Technology
A2I09VD030G Data Sheet			Active	575	1300	48	46.1	40.5	LDMOS
A2I09VD030N Data Sheet			Active	575	1300	48	46.1	40.5	LDMOS

Documentation

Quick reference to our documentation types.

7 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

PDFMay 12, 2004Rev 1
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

PDFOct 9, 2003Rev 0

A2I09VD030N 575-1300 MHz, 4 W Avg, 48 V Data Sheet[A2I09VD030N]

PDFOct 13, 2022Rev 2

98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins[SOT1722-3]

PDFMar 11, 2016Rev A
98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins[SOT1722-1]

PDFFeb 15, 2016Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

1-5of 7 design files

Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016802 BRF_HIGH_POWER_MODEL_AWR_KIT
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Models
A2I09VD030N RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 20165.8 MBA2I09VD030N_MDL_AWR

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Models
A2I09VD030N, A2I09VD030GN S-Parameters

S2PRev 0Dec 16, 201615.8 KBA2I09VD030N-SP

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Models
A2I09VD030N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 20191.2 MBA2I09VD030N_MDL_ADS

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Printed Circuit Boards and Schematics
A2I09VD030N PCB DXF file

ZIPRev 1Dec 16, 2016817.0 KBA2I09VD030N-PCB

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Calculators
A2I09VD030N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jul 6, 2017104.5 KBA2I09VD030N_MTTF_CALC

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575-1300 MHz, 4 W Avg., 48 V Airfast®Wideband Integrated RF LDMOS Amplifier

Product Details

Features

RF Performance Tables

900 MHz

700 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (3)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

A2I09VD030N 575-1300 MHz, 4 W Avg, 48 V Data Sheet[A2I09VD030N]

Package Information (2)

98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins[SOT1722-3]

98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins[SOT1722-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (3)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987[AN1987]

Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977[AN1977]

Data Sheet (1)

A2I09VD030N 575-1300 MHz, 4 W Avg, 48 V Data Sheet[A2I09VD030N]

Package Information (2)

98ASA00684D, TO-270WBG-15, 17.53x9.02x2.59, Pitch 1.02, 16 Pins[SOT1722-3]

98ASA00630D, TO-270WB-15, 17.53x9.02x2.59, Pitch 3.05, 16 Pins[SOT1722-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2I09VD030N RF High-Power Model AWR Product Model Design Kit

A2I09VD030N, A2I09VD030GN S-Parameters

A2I09VD030N RF High-Power Model ADS Product Model Design Kit

A2I09VD030N PCB DXF file

A2I09VD030N RF Power Electromigration MTTF Calculation Program

Filter by

Filter By

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2I09VD030N RF High-Power Model AWR Product Model Design Kit

A2I09VD030N, A2I09VD030GN S-Parameters

A2I09VD030N RF High-Power Model ADS Product Model Design Kit

A2I09VD030N PCB DXF file

A2I09VD030N RF Power Electromigration MTTF Calculation Program

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575-1300 MHz, 4 W Avg., 48 V Airfast^®Wideband Integrated RF LDMOS Amplifier