Features
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
Package
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
Features
Zero-voltage-switching resonant LLC controller, extended feature set
Package
SO20: plastic, small outline package; 20 leads; 1.27 mm pitch; 12.8 mm x 7.5 mm x 2.65 mm body
Buy Options
TEA1611T/N1,518
No Longer Manufactured
12NC: 935285313518
Details
Order
TEA1611T/N2,518
No Longer Manufactured
12NC: 935289196518
Details
Order
Operating Features
| Parameter | Value |
|---|---|
Topology | Resonant |
Environmental
| Part/12NC | PbFree | EU RoHS | Halogen Free | RHF Indicator | REACH SVHC | Weight (mg) |
|---|---|---|---|---|---|---|
TEA1611T/N1,518(935285313518) | Yes | Yes | No |  | REACH SVHC | 506.0 |
TEA1611T/N2,518(935289196518) | Yes | Yes | No | | REACH SVHC | 513.08367 |
Quality
| Part/12NC | Safe Assure Functional Safety | Moisture Sensitivity Level (MSL) | Peak Package Body Temperature (PPT) (C°) | ||
|---|---|---|---|---|---|
| Lead Soldering | Lead Free Soldering | Lead Soldering | Lead Free Soldering | ||
TEA1611T/N1,518 (935285313518) | No | 2 | 3 | 240 | 260 |
TEA1611T/N2,518 (935289196518) | - | 2 | 2 | 240 | 260 |
Shipping
| Part/12NC | Harmonized Tariff (US)Disclaimer |
|---|---|
TEA1611T/N1,518 (935285313518) | 854231 |
TEA1611T/N2,518 (935289196518) | 854231 |
Discontinued and Replacement Part Data
| Part/12NC | Discontinuance Notice | Last Time Buy Date | Last Time Delivery Date | Replacement |
|---|---|---|---|---|
TEA1611T/N1,518 (935285313518) | - | 2002-06-30 | 2002-12-31 | TEA1611T/N2,518 (935289196518) |
TEA1611T/N2,518 (935289196518) | - | 1999-01-30 | 1999-12-31 | TEA1716T/1,518 (935296565518) |
Product Change Notice
| Part/12NC | Issue Date | Effective Date | PCN | Title |
|---|---|---|---|---|
TEA1611T/N1,518 (935285313518) | 2020-12-15 | 2020-12-16 | 202011011I | NXP Will Add a Sealed Date to the Product Label |
More about TEA1611T
The TEA1611T is a monolithic integrated circuit implemented in a high voltage Diffusion Metal Oxide Semiconductor (DMOS) process, which is a high voltage controller for a zero voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately programmable frequency range, a latched shut-down function and a transconductance error amplifier.