BFU660F Product Information|NXP

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Operating Features

ParameterValue
Generation
6th
fT [typ] (MHz)
21000
VCEO [max] (V)
5.5
Ptot [max] (mW)
225
Polarity
NPN
ParameterValue
@f (MHz)
5800
@VCE (V)
2
@IC (mA)
6
NF (dB)
1.2

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
BFU660F,115(934064611115)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
6.663881442682

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)
Lead SolderingLead Free SolderingLead SolderingLead Free Soldering
BFU660F,115
(934064611115)
No
1
1
240
260

Shipping

Part/12NCHarmonized Tariff (US)Disclaimer
BFU660F,115
(934064611115)
854121

More about BFU660F

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.