A3T21H455W23S Product Information|NXP

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Operating Features

ParameterValue
Frequency (Min) (MHz)
2110
Frequency (Max) (MHz)
2200
Supply Voltage (Typ) (V)
30
ParameterValue
Peak Power (Typ) (dBm)
57
Peak Power (Typ) (W)
501
Die Technology
LDMOS

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
A3T21H455W23SR6(935368316128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6258.0

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
A3T21H455W23SR6
(935368316128)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)Disclaimer
A3T21H455W23SR6
(935368316128)
854233

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
A3T21H455W23SR6
(935368316128)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about A3T21H455W23S

The A3T21H455W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.