A3G20S250-01S Product Information|NXP

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Operating Features

ParameterValue
Frequency (Min) (MHz)
1800
Frequency (Max) (MHz)
2200
Supply Voltage (Typ) (V)
48
ParameterValue
Peak Power (Typ) (dBm)
53.8
Peak Power (Typ) (W)
240
Die Technology
GaN

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
A3G20S250-01SR3(935377832118)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
2535.3

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
A3G20S250-01SR3
(935377832118)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
A3G20S250-01SR3
(935377832118)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
A3G20S250-01SR3
(935377832118)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about A3G20S250-01S

The A3G20S250-01S 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.