Design Files
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design files types.
1 design file
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Models
S-parameters BFU610F
NPN Wideband Silicon RF Transistor
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
sot343f_3d
Product Details
Features
- 40 GHz fT silicon technology
- High associated gain 12 dB at 5.8 GHz
- Low noise high gain microwave transistor
- Noise figure (NF) = 1.7 dB at 5.8 GHz
Target Applications
- AMR
- Analog/digital cordless applications
- Bluetooth
- FM radio
- GPS
- Ku band oscillators DRO’s
- Low current battery equiped applications
- Low noise amplifiers for microwave communications systems
- LTE, cellular, UMTS
- Mobile TV
- RKE
- ZigBee
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Documentation
Quick reference to our documentation types.
5 documents
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Data Sheet
NPN wideband silicon RF transistor
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Package Information
Plastic surface-mounted flat pack package; 4 leads
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Packing Information
DFP4; Tape reel SMD; standard product orientation 12NC ending 115