NPN Wideband Silicon RF Transistor

See product image

Product Details

Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
  • Maximum stable gain 18.5 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise amplifiers for ISM applications
  • ISM band oscillators

Part numbers include: BFU530W.

Buy/Parametrics










































































































Documentation

Quick reference to our documentation types.

1-5 of 9 documents

Show All

Design Files

Quick reference to our design files types.

5 design files

Hardware

Quick reference to our board types.

Support

What do you need help with?