A2T18H100-25S|1805-1995 MHz, 18 W Avg, 28 V

Product Details

Features

Advanced High Performance In-Package Doherty
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 230 mA, V_GSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	18.1	50.2	7.7	–31.0
1840 MHz	18.2	49.6	7.8	–33.0
1880 MHz	18.1	49.8	7.9	–34.4

1900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 210 mA, V_GSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1930 MHz	18.8	51.0	8.1	–31.3
1960 MHz	18.7	50.2	7.9	–32.7
1990 MHz	18.6	50.1	7.8	–33.3

Buy/Parametrics

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A2T18H100-25S 18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering frequencies from 1805 to 1995 MHz.

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2016-10-31

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

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Oct 31, 2014

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A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

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This document explains the format used by NXP® for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

1074535848819727693421 PSP

171.0 KB

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2016-11-09

Using Data Sheet Impedances for RF LDMOS Devices

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1362954192319715956460 PSP

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98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

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Feb 15, 2016

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98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

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/docs/en/data-sheet/A2T18H100-25S.pdf

2016-10-31

1415052610408713175763 PSP 1

Oct 31, 2014

Data Sheet

A2T18H100-25S 18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering frequencies from 1805 to 1995 MHz.

None

/docs/en/data-sheet/A2T18H100-25S.pdf

English

documents

755294

None

980000996212993340

2022-12-07

N

/docs/en/data-sheet/A2T18H100-25S.pdf

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

/docs/en/data-sheet/A2T18H100-25S.pdf

documents

980000996212993340

Data Sheet

N

en

None

Y

pdf

0

N

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

755.3 KB

A2T18H100-25S

N

1415052610408713175763

Package Information

1

/docs/en/package-information/98ASA00406D.pdf

2016-10-31

1362954192319715956460 PSP 3

Feb 15, 2016

Package Information

None

/docs/en/package-information/98ASA00406D.pdf

English

documents

56071

None

302435339416912908

2022-12-07

N

/docs/en/package-information/98ASA00406D.pdf

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

/docs/en/package-information/98ASA00406D.pdf

documents

302435339416912908

Package Information

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en

None

D

pdf

A

N

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

56.1 KB

SOT1797-1

N

1362954192319715956460

Technical Notes

1

/docs/en/engineering-bulletin/EB212.pdf

2016-11-09

1074535848819727693421 PSP 2

Jan 19, 2004

Technical Notes

This document explains the format used by NXP® for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets.

None

/docs/en/engineering-bulletin/EB212.pdf

English

documents

170979

None

389245547230346745

2024-09-13

N

/docs/en/engineering-bulletin/EB212.pdf

Using Data Sheet Impedances for RF LDMOS Devices

/docs/en/engineering-bulletin/EB212.pdf

documents

389245547230346745

Technical Notes

N

en

None

Y

pdf

0

N

Using Data Sheet Impedances for RF LDMOS Devices

171.0 KB

EB212

N

1074535848819727693421

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Documentation

Quick reference to our documentation types.

3 documents

Compact List

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet[A2T18H100-25S]

PDFOct 31, 2014Rev 0

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins[SOT1797-1]

PDFFeb 15, 2016Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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Models
A2T18H100-25S RF High-Power Model AWR Product Model Design Kit

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1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

1800 MHz

1900 MHz

Buy/Parametrics

Documentation

Filter by

Data Sheet (1)

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet[A2T18H100-25S]

Package Information (1)

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins[SOT1797-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Data Sheet (1)

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet[A2T18H100-25S]

Package Information (1)

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins[SOT1797-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

A2T18H100-25S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T18H100-25SR3 S-Parameters

A2T18H100-25SR3 S-Parameters

A2T18H100-25S RF High-Power Model ADS Product Model Design Kit

A2T18H100-25SR3 S-Parameters

A2T18H100-25S 1800 MHz PCB DXF file

A2T18H100-25S RF Power Electromigration MTTF Calculation Program

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Filter By

A2T18H100-25S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T18H100-25SR3 S-Parameters

A2T18H100-25SR3 S-Parameters

A2T18H100-25S RF High-Power Model ADS Product Model Design Kit

A2T18H100-25SR3 S-Parameters

A2T18H100-25S 1800 MHz PCB DXF file

A2T18H100-25S RF Power Electromigration MTTF Calculation Program

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1805-1995 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

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A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet[A2T18H100-25S]