A2T18H100-25S|1805-1995 MHz, 18 W Avg, 28 V

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The A2T18H100-25SR3 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.

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Data Sheet

Product Details

Features

Advanced High Performance In-Package Doherty
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 230 mA, V_GSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	18.1	50.2	7.7	–31.0
1840 MHz	18.2	49.6	7.8	–33.0
1880 MHz	18.1	49.8	7.9	–34.4

1900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 210 mA, V_GSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1930 MHz	18.8	51.0	8.1	–31.3
1960 MHz	18.7	50.2	7.9	–32.7
1990 MHz	18.6	50.1	7.8	–33.3

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

3 documents

^{Data Sheet}
A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet

PDFRev 0Oct 31, 2014755.3 KBA2T18H100-25SEnglish
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

PDFRev AFeb 15, 201656.1 KBSOT1797-1English

Design Resources

Design Files

Quick reference to our design files types.

1-5 of 9 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
A2T18H100-25S RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Apr 2, 2015 00:00:001.6 MBA2T18H100_25S_MDL_AWR
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RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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A2T18H100-25SR3 S-Parameters

S2PRev 0Oct 31, 2014 00:00:0054.9 KBA2T18H100_PEAKING_0P3VDC_SP
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A2T18H100-25SR3 S-Parameters

S2PRev 0Oct 31, 2014 00:00:0054.9 KBA2T18H100_CARRIER_230MA_SP
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^Models
A2T18H100-25S RF High-Power Model ADS Product Model Design Kit

ZIPRev 3Jun 17, 2019 00:00:00693.4 KBA2T18H100_25S_MDL_ADS
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^Models
A2T18H100-25SR3 S-Parameters

S2PRev 0Oct 31, 2014 00:00:0054.9 KBA2T18H100_PEAKING_300MA_SP
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^{Printed Circuit Boards and Schematics}
A2T18H100-25S 1800 MHz PCB DXF file

ZIPRev 1Nov 4, 2014 00:00:00245.8 KBA2T18H100_25S_1800_PCB
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^Calculators
A2T18H100-25S RF Power Electromigration MTTF Calculation Program

XLSXRev 0Nov 16, 2015 00:00:0032.5 KBA2T18H100_25S_MTTF_CALC
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Show All

1805-1995 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

1800 MHz

1900 MHz

Buy/Parametrics

Documentation

Filter by

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

Design Resources

Design Files

Filter by

A2T18H100-25S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T18H100-25SR3 S-Parameters

A2T18H100-25SR3 S-Parameters

A2T18H100-25S RF High-Power Model ADS Product Model Design Kit

A2T18H100-25SR3 S-Parameters

A2T18H100-25S 1800 MHz PCB DXF file

A2T18H100-25S RF Power Electromigration MTTF Calculation Program

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Support

What do you need help with?

Suggested Links

1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

1800 MHz

1900 MHz

Buy/Parametrics

Documentation

Filter by

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins

Design Resources

Design Files

Filter by

A2T18H100-25S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T18H100-25SR3 S-Parameters

A2T18H100-25SR3 S-Parameters

A2T18H100-25S RF High-Power Model ADS Product Model Design Kit

A2T18H100-25SR3 S-Parameters

A2T18H100-25S 1800 MHz PCB DXF file

A2T18H100-25S RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

1805-1995 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet