Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 29.5 Vdc, I_DQA = 590 mA, V_GSB = 0.78 Vdc, P_out = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	17.2	53.5	8.0	–28.3
1840 MHz	17.4	54.1	8.1	–29.4
1880 MHz	17.1	53.7	7.9	–31.2

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	Die Technology
A3T18H455W23S Data Sheet			Not Recommended for New Designs	1805	1880	30	58.4	685	LDMOS

Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet[A3T18H455W23S]

PDFSep 1, 2017Rev 0

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

PDFJun 21, 2017Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Models
A3T18H455W23S Peaking Class C S-Parameters

S2PRev 0Sep 1, 2017136.5 KBA3T18H455W23S-Peaking-Class-C

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Models
A3T18H455W23S Carrier S-Parameters

S2PRev 0Sep 1, 2017136.4 KBA3T18H455W23S-Carrier

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Models
A3T18H455W23S Peaking Class AB S-Parameters

S2PRev 0Sep 1, 2017136.4 KBA3T18H455W23S-Peaking-Class-AB

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Printed Circuit Boards and Schematics
A3T18H455W23S 1800 MHz PCB DXF file

ZIPRev 2Sep 1, 201758.1 KBA3T18H455W23S-1800-PCB

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Calculators
A3T18H455W23S RF Power Electromigration MTTF Calculation Program

XLSXRev 0Sep 5, 201781.3 KBA3T18H455W23S_MTTF_CALC

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Shopping cart

1805-1880 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1800 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet[A3T18H455W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet[A3T18H455W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

A3T18H455W23S Peaking Class C S-Parameters

A3T18H455W23S Carrier S-Parameters

A3T18H455W23S Peaking Class AB S-Parameters

A3T18H455W23S 1800 MHz PCB DXF file

A3T18H455W23S RF Power Electromigration MTTF Calculation Program

Filter by

Filter By

A3T18H455W23S Peaking Class C S-Parameters

A3T18H455W23S Carrier S-Parameters

A3T18H455W23S Peaking Class AB S-Parameters

A3T18H455W23S 1800 MHz PCB DXF file

A3T18H455W23S RF Power Electromigration MTTF Calculation Program

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1805-1880 MHz, 87 W Avg., 30 V Airfast^® RF Power LDMOS Transistor