A5G35H055N|3400-3600 MHz, 7.6 W Avg, 48 V | NXP Semiconductors

3400-3600 MHz, 7.6 W Avg., 48 V Airfast® RF Power GaN Amplifier

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity digital linearization systems
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

RF Performance Table

3500 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 35 mA, VGSB = –4.6 Vdc, Pout = 7.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
3400 MHz15.658.28.0-28.5
3500 MHz15.558.08.4-31.9
3600 MHz15.456.88.1-34.4
1. All data measured in reference circuit with device soldered to printed circuit board.

Buy/Parametrics

1 result

Include 0 NRND

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CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

3400

3600

48

46.7

46.7

GaN

Documentation

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3 documents

Compact List

Design Files

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4 design files

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