A3I25X050N | 2300-2700 MHz, 5.6 W Avg, 28 V | NXP Semiconductors

2300-2700 MHz, 5.6 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier

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Product Details

Features

  • Integrated Doherty splitter and combiner
  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • RoHS compliant

RF Performance Table

2600 MHz

5.6 W Avg. — Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.75 Vdc, Pout = 5.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
2496 MHz 28.5 38.2 –35.3
2590 MHz 28.8 39.0 –35.5
2690 MHz 28.5 37.0 –35.9
8.7 W Avg. — Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.0 Vdc, Pout = 8.7 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
2496 MHz 27.8 44.4 –32.1
2590 MHz 28.0 44.8 –31.9
2690 MHz 28.0 43.7 –30.8

2300 MHz

8.9 W Avg. — Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.5 Vdc, Pout = 8.9 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
2300 MHz 29.2 44.5 –30.6
2350 MHz 28.6 45.0 –31.5
2400 MHz 28.3 44.7 –33.0

Buy/Parametrics

1 result

Include 1 NRND

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

2300

2700

28

47.4

55

LDMOS

Documentation

Quick reference to our documentation types.

4 documents

Compact List

Design Resources

Design Files

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1 design file

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