A5G26S008N |2300-2690 MHz, 27 dBm Avg, 48 V | NXP Semiconductors

2300-2690 MHz, 27 dBm Avg., 48 V Airfast® RF Power GaN Transistor

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Designed for low complexity digital linearization systems
  • Universal broadband driver
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

RF Performance Table

2600 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 17 mA, Pout = 27 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz19.015.810.1-41.0
2595 MHz19.416.510.1-42.4
2690 MHz18.816.49.9-43.6
1. All data measured in reference circuit with device soldered to printed circuit board.

Buy/Parametrics

1 result

Include 0 NRND

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CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

2300

2690

48

40.3

10.7

GaN

Documentation

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4 documents

Compact List

Application Note (2)
Data Sheet (1)
Fact Sheet (1)

Design Resources

Design Files

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4 design files

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