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20 mm x 16 mm Module 25-Lead PCB DXF file
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1805-2200 MHz, 49 dB, 16 W Avg. Airfast® Power Amplifier Module
The A5M20TG042 is a Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN integrated power amplifiers are designed for TDD and FDD 32T mMIMO systems.
Product Details
Features
- 3-stage module solution that includes a 2-stage LDMOS integrated circuit as a driver and a GaN final stage amplifier
- Advanced high performance in-package Doherty
- Fully matched (50 ohm input/output, DC blocked)
- Reduced memory effects for improved linearized error vector magnitude
- Simultaneous dual band operation (B3–B1/B66)
RF Performance Table 1805–2200 MHz
Typical LTE Performance: Pout = 16 W Avg., VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc, 1 x 20 MHz LTE, input PAR = 8 dB @ 0.01% probability on CCDF.(1)
| Carrier center frequency | Gain (dB) | ACPR (dBc) | PAE (%) |
|---|---|---|---|
| 1815 MHz | 47.7 | -27.1 | 43.5 |
| 2000 MHz | 49.1 | -31.8 | 43.5 |
| 2190 MHz | 48.3 | -33.4 | 42.7 |
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Include 0 NRND
Part | Order | CAD Model | Status | Frequency (Min) (MHz) | Frequency (Max) (MHz) | Supply Voltage (Typ) (V) | Peak Power (Typ) (dBm) | Peak Power (Typ) (W) | Die Technology |
|---|---|---|---|---|---|---|---|---|---|
Active | 1805 | 2200 | 28, 45 | 50.9 | 123 | GaN, LDMOS |
2 documents
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Application Note (1)
Data Sheet (1)
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