MMRF1008GH Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
1215
Number of pins
2
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.08
P1dB (Typ) (dBm)
54.4
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
960, 1215
Efficiency (Typ) (%)
65.5
Peak Power (Typ) (W)
338
Frequency Band (Hz)
960000000, 1215000000
ParameterValue
Description
Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
fi(RF) [min] (MHz)
960
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
275 @ Peak
P1dB (Typ) (W)
275
Gain (Typ) (dB)
20.3
Power Gain (Typ) (dB) @ f (MHz)
20.3 @ 1030
Frequency (Max) (MHz)
1215
Frequency (Min) (MHz)
960
Frequency (Min-Max) (GHz)
0.96000004 to 1.215
frange [max] (MHz)
1215
frange [min] (MHz)
960
Rth(j-a) (K/W)
0.08
Matching
input and output impedance matching
Modes of Operation
pulsed radio frequency signal

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MMRF1008GHR5(935320879178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
3214.8

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MMRF1008GHR5
(935320879178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MMRF1008GHR5
(935320879178)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MMRF1008GHR5
(935320879178)
2025-04-162025-05-26202504007IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about MMRF1008H

RF Power transistors, MMRF1008H, MMRF1008HS and MMRF1008GH are designed for applications operating at frequencies from 900 and 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.