MMDS25254H Product Information|NXP

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Operating Features

ParameterValue
fi(RF) [max] (MHz)
2700
Number of pins
32
Package Style
HVQFN
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2300, 2700
Frequency Band (Hz)
2300000000, 2700000000
Description
ADAM - Advanced Doherty Alignment Module, 2400-2800 MHz
ParameterValue
fi(RF) [min] (MHz)
2300
Frequency (Max) (MHz)
2700
Frequency (Min) (MHz)
2300
Frequency (Min-Max) (GHz)
2.3 to 2.7
frange [max] (MHz)
2700
frange [min] (MHz)
2300

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MMDS25254HT1(935322101528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
110.6

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
MMDS25254HT1
(935322101528)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MMDS25254HT1
(935322101528)
854239
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MMDS25254HT1
(935322101528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about MMDS25254H

The MMDS25254H is an advanced Doherty alignment module (ADAM), a new class of highly integrated GaAs MMIC control circuits designed specifically to optimize the performance of today's Doherty amplifiers. ADAM provides the ability to align and optimize the RF performance in the carrier and peaking paths of a Doherty amplifier thus providing improved overall BTS performance. When combined with Airfast® power transistors, this sophisticated technology provides increased manufacturing yields and power added efficiency. Available for frequency bands spanning 700 MHz to 2700 MHz.

Advantages:
  • Production yield improvement and tighter parametric distributions
  • Enables significant Doherty bandwidth improvement
  • Optimized performance over the entire cellular frequency band
  • Improved DPD correction with tighter performance distributions
  • Increased system efficiency (across entire frequency band)
  • Smaller output devices can be used, system efficiency is increased
  • Enables consistent asymmetric Doherty with different transistors (works with symmetric Doherty as well)
  • Field adjustment possible to optimize power amplifier performance under different conditions (power level, supply voltage, temperature)
More