Design Files
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2 W High Gain Power Amplifier for Cellular Infrastructure, InGaP GaAs HBT
The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 40 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 x 4 surface mount package.
QFN 4 x 4, 24-Lead Package Image
Product Details
Features
- P1dB: up to 33 dBm
- Gain: More than 40 dB
- 5 V Supply
- Excellent Linearity
- High Efficiency
- Single-ended Power Detector
- Band Tunable
- RoHS Compliant
- In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.
RF Performance Tables
W-CDMA PA Driver Performance
Typical PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, ICQ = 265 mA| Frequency | Pout (dBm) |
Gps (dB) |
ACPR (dBc) |
ICC Total |
Test Signal |
| 2600 MHz | 18.0 | 42.6 | –50.8 | 296 | W-CDMA |
| 2140 MHz | 17.0 | 43.7 | –50.7 | 293 | W-CDMA |
W-CDMA Output PA Driver Performance
Typical Output PA Driver Performance: VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc, ICQ = 450 mA| Frequency | Pout (dBm) |
Gps (dB) |
ACPR (dBc) |
ICC Total |
Test Signal |
| 2600 MHz | 22.2 | 42.7 | –48.0 | 501 | W-CDMA |
Buy/Parametrics
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Documentation
Quick reference to our documentation types.
4 documents
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Fact Sheet
Linear Amplifiers Fact Sheet
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Package Information
98ASA00462D, QFN Punch, 4.0x4.0x0.85, Pitch 0.5, 24 Pins
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Supporting Information
MMZ25333B 2 Watt High Gain Power Amplifier for Cellular Infrastructure
