6 - 18 GHz Wideband Transistors

We offer a broad selection of wideband transistor solutions within our RF transistor portfolio. These next-generation devices offer high RF noise figure versus gain performance while drawing low current. This allows a better signal reception at low power and enables RF receivers to operate more robustly in noisy environments.

Features:

  • Consuming 3 mA to generate 13.5 dB gain at 12 GHz
  • High linearity of 34 dBm (OIP3) at 1.8 GHz
  • High gain of 13.5 dB at 12 GHz with a low noise figure of 1.45 dB
  • Plastic surface-mount SOT343F package

Target Applications:

  • Ka band oscillators DRO’s
  • C-band high output buffer amplifier
  • ZigBee
  • High linearity applications
  • Wi-Fi / WLAN / WiMAX
  • Medium output power applications
  • Low current battery equipped applications
  • Low noise amplifiers for microwave communications systems
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QUBiC4 document

QUBiC4 Si and SiGe:C transistors for any RF function

Our wideband RF transistor portfolio features aboard package variety for applications up to 20 GHz and provides robust, economical choices to our customers.