MMZ25332B|1500-2800 MHz, 26.5 dB Amplifier

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The MMZ25332BT1 is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides high linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 22 dBm, covering frequencies from 1500-2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost-effective, surface mount QFN 3 x 3 package. The device offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.

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Data Sheet

Application Notes

Product Details

Features

Frequency: 1500-2800 MHz
P1dB: 33 dBm @ 2500 MHz
Power Gain: 26.5 dB @ 2500 MHz
OIP3: 48 dBm @ 2500 MHz
EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
Active Bias Control (adjustable externally)
Power Down Control via V_BIAS Pin
Class 3A HBM ESD Rating
Single 3 to 5 V Supply
Single-ended Power Detector
Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.

Part numbers include: MMZ25332B.

RF Performance Table

W-CDMA, LTE Performance

Typical Performance: V_CC1 = V_CC2 = V_BIAS = 5 Vdc, I_CQ = 400 mA

Frequency	Pout (dBm)	G_ps (dB)	ACPR (dBc)	PAE (%)	Test Signal
2140 MHz	22	27.0	–50.0	7.0	W-CDMA
2620 MHz	21	26.0	–50.0	5.0	LTE 20 MHz

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

1-5 of 10 documents

^{Data Sheet}
MMZ25332B 1500-2800 MHz, 33 dBm, Linear Amplifier Data Sheet

PDFRev 3Nov 29, 2017594.3 KBMMZ25332BEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^Brochure
Jump Start Your Small Cell Equipment Design - Brochure

PDFRev 2Oct 9, 2014705.1 KBBRSMALLCELLSEnglish, 中文
^Brochure
RF GaAs Solutions

PDFRev 1Dec 21, 2011416.3 KBBR1609English
^{Fact Sheet}
Medium Power PAs and LNAs for Femtocells Fact Sheet

PDFRev 1Dec 30, 2014328.0 KBRFFEMTOCELLFSEnglish
^{Fact Sheet}
Linear Amplifiers Fact Sheet

PDFRev 3Dec 30, 2014189.6 KBRFLINAMPFSEnglish
^{Package Information}
98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85)

PDFRev ANov 30, 2017279.5 KBSOT1677-1English
^{Quick Reference Guide}
RF MMIC and GPA Cross Reference

PDFRev 2Dec 21, 20111.0 MBMMICGPAQRGEnglish
^{Supporting Information}
GaAs MMICs for Femtocells

PDFRev 0May 6, 20123.4 MBRFFEMTOCELL_TRN_SIEnglish
^{White Paper}
Small Cells Call for Scalable Architecture White Paper

PDFRev 3May 31, 2013783.5 KBSMCELLRFWPEnglish

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Design Resources

Design Files

Quick reference to our design files types.

2 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
MMZ25332BT1 S-Parameters

S2PRev 0May 3, 2012 00:00:0068.4 KBMMZ25332B_SP
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^{Printed Circuit Boards and Schematics}
QFN 3x3-12H CAD DXF File

ZIPRev 1May 3, 2012 00:00:00388.2 KBQFN_3X3_12H_DXF_PCB
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Hardware

Quick reference to our board types.

1 hardware offering

^{Evaluation and Development Boards}
RF Module for BSC913x Boards

BSC913XRFBD

1500-2800 MHz, 26.5 dB, 33 dBm InGaP HBT

Product Details

Features

RF Performance Table

W-CDMA, LTE Performance

Buy/Parametrics

Documentation

Filter by

MMZ25332B 1500-2800 MHz, 33 dBm, Linear Amplifier Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

Jump Start Your Small Cell Equipment Design - Brochure

RF GaAs Solutions

Medium Power PAs and LNAs for Femtocells Fact Sheet

Linear Amplifiers Fact Sheet

98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85)

RF MMIC and GPA Cross Reference

GaAs MMICs for Femtocells

Small Cells Call for Scalable Architecture White Paper

Design Resources

Design Files

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MMZ25332BT1 S-Parameters

QFN 3x3-12H CAD DXF File

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Hardware

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RF Module for BSC913x Boards

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