Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

1990 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 30 Vdc, I_DQA = 540 mA, V_GSB = 0.6 Vdc, P_out = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1930 MHz	16.2	49.6	8.1	–31.0
1960 MHz	16.5	49.4	8.0	–32.1
1990 MHz	16.4	49.1	7.8	–32.6

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	Die Technology
A3T19H455W23S Data Sheet			Not Recommended for New Designs	1930	1990	30	57.3	541	LDMOS

Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet[A3T19H455W23S]

PDFDec 22, 2017Rev 0

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

PDFJun 21, 2017Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Models
A3T19H455W23S Peaking Class AB S-Parameters

S2PRev 0Dec 22, 2017136.4 KBA3T19H455W23S-Peaking-Class-AB

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Models
A3T19H455W23S Carrier S-Parameters

S2PRev 0Dec 22, 2017136.4 KBA3T19H455W23S-Carrier

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Models
A3T19H455W23S Peaking Class C S-Parameters

S2PRev 0Dec 22, 2017136.5 KBA3T19H455W23S-Peaking-Class-C

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Printed Circuit Boards and Schematics
A3T19H455W23S 1900 MHz PCB DXF file

ZIPRev 0Dec 22, 201753.3 KBA3T19H455W23S-1900-PCB

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1930-1990 MHz, 81 W Avg., 30 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

1990 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet[A3T19H455W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet[A3T19H455W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

A3T19H455W23S Peaking Class AB S-Parameters

A3T19H455W23S Carrier S-Parameters

A3T19H455W23S Peaking Class C S-Parameters

A3T19H455W23S 1900 MHz PCB DXF file

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Filter By

A3T19H455W23S Peaking Class AB S-Parameters

A3T19H455W23S Carrier S-Parameters

A3T19H455W23S Peaking Class C S-Parameters

A3T19H455W23S 1900 MHz PCB DXF file

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1930-1990 MHz, 81 W Avg., 30 V Airfast^® RF Power LDMOS Transistor