A2T08VD020N|728-960 MHz, 2 W Avg, 48 V | NXP Semiconductors

728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor

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Features

  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Buy/Parametrics

1 result

Include 0 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

728

960

48

43.4

21.9

LDMOS

Documentation

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3 documents

Compact List

Design Files

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3 design files

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