A2V07H525-04N|595-851 MHz, 120 W Avg, 48 V | NXP Semiconductors

595-851 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor

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Features

  • Advanced high performance in-package Doherty
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Tables

600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 0.5 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
595 MHz17.854.76.8–27.5
623 MHz17.556.97.2–29.2
652 MHz17.353.46.8–27.2

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 1.25 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
758 MHz18.453.07.1–31.1
780 MHz18.354.17.1–31.1
803 MHz17.554.16.7–30.6

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Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

End of Life

595

851

48

57.8

602

LDMOS

Documentation

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4 documents

Compact List

Application Note (1)
Data Sheet (1)
Package Information (1)
Technical Notes (1)

Design Resources

Design Files

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2 design files

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