A2V07H400-04N|420-851 MHz, 107 W Avg, 48 V

Product Details

Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 700 mA, V_GSB = 1.3 Vdc, P_out = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
595 MHz	19.4	58.4	6.8	–29.8
623 MHz	19.9	59.4	7.1	–30.1
652 MHz	19.8	57.2	7.1	–32.2

460 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 400 mA, V_GSB = 1.5 Vdc, P_out = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
460 MHz	17.6	58.7	7.1	–29.7
465 MHz	17.7	58.7	7.1	–30.6
470 MHz	17.9	57.1	7.0	–32.2

420 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 500 mA, V_GSB = 1.6 Vdc, P_out = 100 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
420 MHz	18.8	53.3	7.0	–27.0
423 MHz	18.8	53.5	7.0	–27.6
425 MHz	18.8	53.3	7.0	–27.6

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	Die Technology
A2V07H400-04N Data Sheet			Active	420	851	48	57.3	537	LDMOS

Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A2V07H400-04N 420-851 MHz, 107 W Avg, 48 V Data Sheet[A2V07H400-04N]

PDFOct 11, 2021Rev 2

98ASA10833D[SOT1818-4]

PDFMar 22, 2016Rev B

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Models
A2V07H400-04N S-Parameters Peaking Class C

S2PRev 0Sep 22, 2017104.1 KBA2V07H400-04N-Peaking-Class-C

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Models
A2V07H400-04N S-Parameters Peaking Class AB

S2PRev 0Sep 22, 2017104.1 KBA2V07H400-04N-Peaking-Class-AB

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Models
A2V07H400-04N S-Parameters Carrier

S2PRev 0Sep 22, 2017104.1 KBA2V07H400-04N-Carrier

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Printed Circuit Boards and Schematics
A2V07H400-04N 600 MHz PCB DXF file

ZIPRev 0Sep 22, 2017123.0 KBA2V07H400-04N-600-PCB

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Calculators
A2V07H400-04N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Sep 25, 201787.5 KBA2V07H400-04N_MTTF_CALC

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420-851 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

600 MHz

460 MHz

420 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A2V07H400-04N 420-851 MHz, 107 W Avg, 48 V Data Sheet[A2V07H400-04N]

Package Information (1)

98ASA10833D[SOT1818-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A2V07H400-04N 420-851 MHz, 107 W Avg, 48 V Data Sheet[A2V07H400-04N]

Package Information (1)

98ASA10833D[SOT1818-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

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A2V07H400-04N S-Parameters Peaking Class C

A2V07H400-04N S-Parameters Peaking Class AB

A2V07H400-04N S-Parameters Carrier

A2V07H400-04N 600 MHz PCB DXF file

A2V07H400-04N RF Power Electromigration MTTF Calculation Program

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Filter By

A2V07H400-04N S-Parameters Peaking Class C

A2V07H400-04N S-Parameters Peaking Class AB

A2V07H400-04N S-Parameters Carrier

A2V07H400-04N 600 MHz PCB DXF file

A2V07H400-04N RF Power Electromigration MTTF Calculation Program

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420-851 MHz, 107 W Avg., 48 V Airfast^® RF Power LDMOS Transistor