A3T21H456W23S|2110-2200 MHz, 87 W Avg, 30 V | NXP Semiconductors

2110-2200 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

See product image

Product Details

Features

  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 30 Vdc, IDQA = 800 mA, VGSB = 0.35 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz14.849.58.0–30.3
2140 MHz15.348.98.0–31.1
2170 MHz15.548.67.8–31.3
2200 MHz15.547.97.7–32.0

Buy/Parametrics

1 result

Exclude 1 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Not Recommended for New Designs

2110

2200

30

57.5

562

LDMOS

Documentation

Quick reference to our documentation types.

4 documents

Compact List

Design Files

Quick reference to our design files types.

4 design files

Support

What do you need help with?

Recently viewed products

There are no recently viewed products to display.