Product Details

Features

Advanced high performance in-package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate-source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 30 Vdc, I_DQA = 800 mA, V_GSB = 0.35 Vdc, P_out = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	14.8	49.5	8.0	–30.3
2140 MHz	15.3	48.9	8.0	–31.1
2170 MHz	15.5	48.6	7.8	–31.3
2200 MHz	15.5	47.9	7.7	–32.0

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Frequency (Min) (MHz)	Frequency (Max) (MHz)	Supply Voltage (Typ) (V)	Peak Power (Typ) (dBm)	Peak Power (Typ) (W)	Die Technology
A3T21H456W23S Data Sheet			Not Recommended for New Designs	2110	2200	30	57.5	562	LDMOS

Documentation

Quick reference to our documentation types.

4 documents

Compact List

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

PDFFeb 24, 2011Rev 1

A3T21H456W23S 2110-2200 MHz, 87 W Avg, 30 V Data Sheet[A3T21H456W23S]

PDFAug 8, 2018Rev 1

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

PDFJun 21, 2017Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Models
A3T21H456W23S Peaking Class C S-Parameters

S2PRev 0May 25, 2018238.5 KBA3T21H456W23S-Peaking-Class-C

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Models
A3T21H456W23S Peaking Class AB S-Parameters

S2PRev 0May 25, 2018238.5 KBA3T21H456W23S-Peaking-Class-AB

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Models
A3T21H456W23S Carrier S-Parameters

S2PRev 0May 25, 2018238.5 KBA3T21H456W23S-Carrier

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Printed Circuit Boards and Schematics
A3T21H456W23S 2100 MHz PCB DXF file

ZIPRev 1May 23, 201818.6 KBA3T21H456W23S-2100-PCB

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2110-2200 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

2100 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T21H456W23S 2110-2200 MHz, 87 W Avg, 30 V Data Sheet[A3T21H456W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

Data Sheet (1)

A3T21H456W23S 2110-2200 MHz, 87 W Avg, 30 V Data Sheet[A3T21H456W23S]

Package Information (1)

98ASA00974D, ACP-1230S-4L2S[SOT1800-4]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

Design Files

Filter by

A3T21H456W23S Peaking Class C S-Parameters

A3T21H456W23S Peaking Class AB S-Parameters

A3T21H456W23S Carrier S-Parameters

A3T21H456W23S 2100 MHz PCB DXF file

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Filter By

A3T21H456W23S Peaking Class C S-Parameters

A3T21H456W23S Peaking Class AB S-Parameters

A3T21H456W23S Carrier S-Parameters

A3T21H456W23S 2100 MHz PCB DXF file

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2110-2200 MHz, 87 W Avg., 30 V Airfast^® RF Power LDMOS Transistor