A5G19H605W19N | 1930–1995 MHz, 85 W Avg, 48 V

A5G19H605W19N | 1930–1995 MHz, 85 W Avg, 48 V | NXP Semiconductors

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

Roll over image to zoom in

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1930 to 1995 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Plastic package
RoHS compliant

RF Performance Table

1900 MHz

Typical Doherty Single-Carrier W-CDMA Production Test Fixture Performance: V_DD = 48 Vdc, I_DQA = 300 mA, V_GSB = –5.0 Vdc, P_out = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

Frequency	G_ps (dB)	η_D	Output PAR (dB)	ACPR (dBc)
1930 MHz	16.3	54.3	8.9	–29.2
1960 MHz	16.7	55.1	8.6	–30.2
1995 MHz	17.0	55.7	8.2	–31.2

1. All data measured with device soldered to NXP production test fixture.

Buy/Parametrics

‌ ‌ ‌	‌ ‌	‌ ‌	‌ ‌	‌ ‌	‌ ‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌

Documentation

Quick reference to our documentation types.

4 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A5G19H605W19N 1930–1995 MHz, 85 W Avg, 48 V Data Sheet[A5G19H605W19N]

PDFMar 20, 2024Rev 1

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

PDFMay 16, 2024Rev 0

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Models
A5G19H605W19N Carrier Class AB S-Parameters

S2PRev 0Mar 18, 202415.9 KBA5G19H605W19N-Carrier-Class-AB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A5G19H605W19N Peaking Class C S-Parameters

S2PRev 0Mar 18, 202415.9 KBA5G19H605W19N-Peaking-Class-AB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Models
A5G19H605W19N Peaking Class AB S-Parameters

S2PRev 0Mar 18, 202415.9 KBA5G19H605W19N-Peaking-Class-AB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Printed Circuit Boards and Schematics
A5G19H605W19N 1900 MHz PCB DXF file

ZIPRev 2Mar 18, 202426.6 KBA5G19H605W19N-1900-PCB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue

1930–1995 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

1900 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A5G19H605W19N 1930–1995 MHz, 85 W Avg, 48 V Data Sheet[A5G19H605W19N]

Fact Sheet (1)

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A5G19H605W19N 1930–1995 MHz, 85 W Avg, 48 V Data Sheet[A5G19H605W19N]

Fact Sheet (1)

RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet[MACROGANFS]

Design Resources

Design Files

Filter by

A5G19H605W19N Carrier Class AB S-Parameters

A5G19H605W19N Peaking Class C S-Parameters

A5G19H605W19N Peaking Class AB S-Parameters

A5G19H605W19N 1900 MHz PCB DXF file

Filter by

Filter By

A5G19H605W19N Carrier Class AB S-Parameters

A5G19H605W19N Peaking Class C S-Parameters

A5G19H605W19N Peaking Class AB S-Parameters

A5G19H605W19N 1900 MHz PCB DXF file

Support

What do you need help with?

Suggested Links

Recently viewed products

1930–1995 MHz, 85 W Avg., 48 V Airfast^® RF Power GaN Transistor